According to informed sources, Intel is ready to start mass production from the MRAM memory (Magnetoresistive Memory Memory Memory).
MRAM's memory is unstable. It can even save data if there was an unexpected power in the system. So, it's like a storage device or RAM. But in fact, MRAM can be seen as the long awaited candidate for general memory, which will replace rapid fast DRAM and an irregular volatile NAND memory. Note that grading goals with these types of memory are becoming increasingly difficult. At the same time, MRAM promises better scales, a response time of 1 ns (better than DRAM theoretical abilities), and a high-speed writing volume that is more than thousands of times more than NAND capabilities.
At the same time, the current generation of MRAM has good reliability indicators. It can store data for 10 years at a temperature of 200 degrees Celsius and resist more than 1 million change rings. In addition, when using a 22-nanometer process, the product rate of suitable MRAM chips is more than 99.9%, which is an excellent result for new and slightly confidential technology. However, it is assumed that mass production can be made on the 14-nm process technology, and the 22-nm above-mentioned standards can be called a "softened" 14-nanometer, experts say.